data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 1 general description high voltage dual s chottky rectifier suited for switch mode power supplies and other power converters. this device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. the mbr10150c is available in standard to-220f-3, to-220-3 and to-220-3 (2) packages. features ? high surge capacity ? 150 c operating junction temperature ? 10a total (5a per diode leg) ? guard-ring for stress protection ? pb-free packages are available main product characteristics i f(av) 2 5a v rrm 150v t j 150 c v f (max) 0.85v mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94v-0 @ 0.125in. ? weight (approximately): 1.9grams (to-220-3, to-220-3 (2) and to-220f-3) ? finish: all extern al surfaces corrosion resistant and terminal ? leads are readily solderable ? lead temperature fo r soldering purposes: 260 c maximum for 10 seconds applications ? power supply ? output rectification ? power management ? instrumentation figure 1. package types of mbr10150c to-220f-3 to-220-3 (optional) to-220-3 (2)
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 2 pin configuration t package (to-220-3) (optional) (to-220-3 (2)) tf package (to-220f-3) figure 2. pin configuration of mbr10150c (top view) figure 3. internal structure of mbr10150c
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 3 ordering information mbr10150c - part number marking id package lead free green lead free green packing type to-220-3 (2) mbr10150ct- e1 mbr10150ct- g1 mbr10150ct- e1 mbr10150ct- g1 tube to-220f-3 mbr10150ctf -e1 mbr10150ctf- g1 mbr10150ctf- e1 mbr10150ctf- g1 tube bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with ?g1? suffix are available in green packages. absolute maximum ratings ( per diode leg) (note 1) note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/ ja . parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 150 v average rectified forward current (rated v r ) t c =142 c i f(av) 5 a peak repetitive forward current (rated v r , square wave, 20khz) t c =142 c i frm 10 a non repetitive peak surge current (surge applied at rated load conditions half wave, single phase, 60hz) i fsm 100 a operating junction temperature range (note 2) t j 150 c storage temperature range t stg -55 to 150 c voltage rate of change (rated v r ) dv/dt 10000 v/ s esd ( machine model=c) >400 v esd (human body model=3b) >8000 v circuit type package t: to-220-3 (2) to-220-3 (optional) tf: to-220f-3 e1: lead free g1: green blank: tube
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 4 recommended operating conditions parameter symbol condition value unit to-220-3/ to-220-3 (2) 3.0 jc junction to case to-220f-3 4.5 to-220-3/ to-220-3 (2) 60 maximum thermal resistance ja junction to ambient to-220f-3 60 c/w electrical characteristics parameter symbol conditions value unit i f =5a, t c =25 c 0.92 maximum instantaneous forward voltage drop (note 3) v f i f =5a, t c =125 c 0.82 v rated dc voltage, t c =25 c 0.1 maximum instantaneous reverse current (note 3) i r rated dc voltage, t c =125 c 15.0 ma note 3: pulse test: pulse width=300 s, duty cycle ? 2.0%.
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 5 typical performance characteristics figure 4. typical forward voltage per diode figure 5. typical reverse current per diode figure6. average forward current vs. case temperature (square, per diode) 0.01 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =150 o c t j =125 o c instantaneous forward voltage (v) instantaneous forward current (a) t j =25 o c 0 20406080100120140160 0.01 0.1 1 10 100 1000 10000 t j =150 o c t j =125 o c reverse current ( a) reverse voltage (v) t j =25 o c 100 105 110 115 120 125 130 135 140 145 150 155 0 1 2 3 4 5 6 7 8 9 10 average forward current (a) case temperature ( o c)
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 6 mechanical dimensions to-220-3 unit: mm(inch) (optional) 1 4 . 2 3 0 ( 0 . 5 6 0 ) 1.160(0.046) 0.813(0.032) 8 . 7 6 3 ( 0 . 3 4 5 ) 2.540(0.100) 0.356(0.014) 2.080(0.082) 3 7 3.560(0.140) 7 9.660(0.380) 0.550(0.022) 60 0.381(0.015) 2 . 5 8 0 ( 0 . 1 0 2 ) 6 0 8 . 5 2 0 ( 0 . 3 3 5 ) 1.500(0.059) 0.200(0.008) 1 . 8 5 0 ( 0 . 0 7 3 ) 2.540(0.100) 0.381(0.015) 0.406(0.016) 3 . 3 8 0 ( 0 . 1 3 3 ) 10.660(0.420) 4.060(0.160) 1.350(0.053) 2 7 . 8 8 0 ( 1 . 0 9 8 ) 3 0 . 2 8 0 ( 1 . 1 9 2 ) 9 . 5 2 0 ( 0 . 3 7 5 ) 1 6 . 5 1 0 ( 0 . 6 5 0 ) 4.820(0.190) 2.880(0.113) 1.760(0.069) 3.560(0.140)
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 7 mechanical dimensions (continued) to-220-3 (2) unit: mm(inch) 3 3 3 9.800(0.386) 10.200(0.402) 3.560(0.140) 3.640(0.143) 0.700(0.028) 0.900(0.035) 1.170(0.046) 1.390(0.055) 2.540(0.100) ref 2.540(0.100) ref 1.200(0.047) 1.400(0.055) 0.600(0.024) ref 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 0.400(0.016) 0.600(0.024) 1.620(0.064) 1.820(0.072) 1.200(0.047) 1.400(0.055) 3.000(0.118) ref
data sheet high voltage power schottky rectifier mbr10150c mar. 2011 rev. 1. 3 bcd semiconductor manufacturing limited 8 mechanical dimensions (continued) to-220f-3 unit: mm(inch) 4.300(0.169) 0.450(0.018) 0.600(0.024) 2.540(0.100) 9.700(0.382) 10.300(0.406) 6.900(0.272) 7.100(0.280) 3.000(0.119) 3.400(0.134) 14.700(0.579) 16.000(0.630) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 3.000(0.119) 3.550(0.140) 3.370(0.133) 3.900(0.154) 2.350(0.093) 2.900(0.114) 4.900(0.193)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
|
